X. Li et al., "A 250-310 GHz Power Amplifier with 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System," in IEEE Transactions on Terahertz Science and Technology, 2021.
发布时间：2023-03-02 点击次数：
上一条：G. Lv, W. Chen, X. Chen, S. Wan, F. M. Ghannouchi and Z. Feng, "A Fully Integrated 3.5-/4.9-GHz Dual-Band GaN MMIC Doherty Power Amplifier Based on Multi-Resonant Circuits," in IEEE Transactions on Microwave Theory and Techniques, 2021.
下一条：Y. Wang, W. Chen, X. Li, S. Li and P. Zhou, "305-325 GHz Non-Reciprocal Isolator Based on Peak-Control Gain-boosting Magnetless Non-reciprocal Metamaterials," 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
